Transient control of resistive random access memory for high speed and high endurance performance
| Autor: | E. K. Chua, Minghua Li, Hongxin Yang, Yu Jiang, Weijie Wang, Victor Yi-Qian Zhuo |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Fast pulse business.industry High density 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Fast switching Resistive random-access memory Power consumption 0103 physical sciences Electronic engineering Optoelectronics Transient (oscillation) 0210 nano-technology business Pulse-width modulation Control methods |
| Zdroj: | 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). |
| DOI: | 10.1109/vlsi-tsa.2016.7480502 |
| Popis: | Of all the advantages exhibited by the RRAM devices, e.g. low power consumption, fast switching speed, and especially the good scalability are particularly striking for high density memory application. However, 3D RRAM still suffer from poor endurance especially during high speed operation which limits its extensive applications. Here, we report the transient control method which enables a significant improvement of device stability and endurance. We demonstrated the stable transient control under the fast pulse switching in RRAM cells with different sizes of 1 μm and 200 nm. Endurance higher than 107 cycles are achieved while keeping the ratio of high/low resistance level at 103. High speed switching with 1 ns pulse width can be achieved. We unveil the material switching dynamics responsible for the stable transient process, which is responsible for the higher endurance for RRAM devices. |
| Databáze: | OpenAIRE |
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