A Threshold Voltage Simulation of Hydrogen-Terminated Diamond MESFETs
| Autor: | Ke Tang, Bing Ren, Ling Yun Shi, Qing Kai Zeng, Jian Huang, Yi Ben Xia, Xiao Feng Zhuang, Zhen Hua Wang, Mei Bi, Li Ya Shen, Yue Lu Zhang, Linjun Wang |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Hydrogen business.industry Reverse short-channel effect Doping General Engineering Electrical engineering chemistry.chemical_element Diamond Drain-induced barrier lowering Overdrive voltage engineering.material Threshold voltage chemistry engineering Optoelectronics Field-effect transistor business |
| Zdroj: | Advanced Materials Research. :1093-1096 |
| ISSN: | 1662-8985 |
| DOI: | 10.4028/www.scientific.net/amr.482-484.1093 |
| Popis: | In this paper, the threshold voltage of diamond film-based metal-semiconductor field effect transistors (MESFETs) has been simulated using Silvaco TCAD tools. The drain current (Id) versus gate voltage (Vg) relationship, and the distribution of acceptors in diamond surface conduction layer were also investigated. From the simulation results, it was found that the gate length contributed the most to the threshold voltage, while the doping depth almost had no impact on the threshold voltage value. |
| Databáze: | OpenAIRE |
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