Tunneling spectroscopy of the silicon metal-oxide-semiconductor system

Autor:	David C. Frystak, Whye-Kei Lye, John Kuehne, Eiji Hasegawa, R. C. Barker, Yin Hu, Tso-Ping Ma
Rok vydání:	1998
Předmět:	Materials science Silicon Hybrid silicon laser business.industry Silicon on insulator chemistry.chemical_element Strained silicon Characterization (materials science) Stress (mechanics) chemistry Electronic engineering Optoelectronics Spectroscopy business Quantum tunnelling
Zdroj:	The 1998 international conference on characterization and metrology for ULSI technology.
Popis:	In this work we demonstrate the application of tunneling spectroscopy to the silicon Metal-Oxide-Semiconductor system. As an electrical characterization method, this technique allows for the direct study of the structure of ultra-thin gate oxides in standard as-fabricated test structures, and their dependence upon processing and electrical stress.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f48d2d4b90e216ac543a816f46c001db https://doi.org/10.1063/1.56806 Zobrazit plný text záznamu