Radiation effects on memristor-based non-volatile SRAM cells
| Autor: | H. M. Vijay, V. N. Ramakrishnan |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Physics Threshold current 02 engineering and technology Memristor Radiation 021001 nanoscience & nanotechnology Network topology Topology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention nvSRAM Memory cell law Modeling and Simulation 0103 physical sciences Static random-access memory Electrical and Electronic Engineering 0210 nano-technology Voltage |
| Zdroj: | Journal of Computational Electronics. 17:279-287 |
| ISSN: | 1572-8137 1569-8025 |
| Popis: | Memristors are a promising candidate for non-volatile memory elements. In this paper, we performed a radiation study on different memristor-based topological Non-Volatile Static Random Access Memory (NVSRAM). A Voltage ThrEshold Adaptive Memristor (VTEAM) model is considered for simulation analysis related to this work. In this paper, four different topologies, namely 3-Transistor 2-Memristor (3T2M) SRAM cell, 2-Transmission Gate 1-Memristor (2TG1M) SRAM cell, 1-Transistor 1-Memristor (1T1M) SRAM cell, and 4-Transistor 2-Memristor (4T2M) SRAM cell are investigated. A double-exponential current pulse is induced during a read operation and perturbation is observed due to irradiation. The memory cell retains its original state after radiation dose is removed. 4T2M SRAM topology is more reliable because its highest threshold current value is $$100\,{\upmu }\hbox {A}$$ , whereas 1T1M SRAM topology is less reliable with the lowest threshold current value of 5 nA. |
| Databáze: | OpenAIRE |
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