Characterization of LPCVD SiC thin films at elevated temperatures for robust MEMS sensor applications
| Autor: | Tino Fuchs, Oliver Kraft, Juergen Graf, Rohlfing Franziska, Radoslav Rusanov, Holger Rank |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Microelectromechanical systems Materials science Young's modulus 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Pressure sensor Thermal expansion chemistry.chemical_compound symbols.namesake chemistry Residual stress 0103 physical sciences Silicon carbide symbols Composite material Thin film 0210 nano-technology |
| Zdroj: | 2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP). |
| DOI: | 10.1109/dtip.2016.7514833 |
| Popis: | In this work we present a systematic characterization of the mechanical properties of thin-film silicon carbide electrodes and released structures as components of a μ-contact type combustion pressure sensor. We developed, fabricated and successfully applied designated MEMS test structures for the determination of the Young's modulus, residual stress, stress gradient and coefficient of thermal expansion of thin SiC films. In particular, a novel model, describing the capacitance-voltage characteristic of the test structures, has been developed and used for the purely electrical determination of the Young's modulus and stress gradient of the SiC layers. |
| Databáze: | OpenAIRE |
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