Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence

Autor:	Wei Lee, Chen Ke Shu, Yung Chung Pan, Wen Hsiung Chen, Wei-Kuo Chen, C. H. Chuang, Ming Chih Lee, Huai Ying Huang
Rok vydání:	2002
Předmět:	Condensed Matter::Materials Science Ion implantation Materials science Photoluminescence Physics and Astronomy (miscellaneous) Exciton Binding energy Photoluminescence excitation Atomic physics Epitaxy Luminescence Arrhenius plot
Zdroj:	Applied Physics Letters. 80:3349-3351
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1476400
Popis:	We have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic P-hole traps. From the Arrhenius plot, the hole binding energy of ∼180 meV and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, the implantation process likely introduced NI and P-related defects. By using photoluminescence excitation technique, we found that the P-implantation-induced localized states not only increase the yellow luminescence but also suppress the transitions from the free carriers to deep levels.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f479abb312eb62517b6d4c9959a733fc https://doi.org/10.1063/1.1476400 Zobrazit plný text záznamu