Selective Doping of Chemically Sensitive Layers on a Multisensing Chip
| Autor: | Jing Li, Jiří Janata, Karel Domanský |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Fabrication
Hydrogen Renewable Energy Sustainability and the Environment Transistor Doping chemistry.chemical_element Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Chip Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Polyaniline Hardware_INTEGRATEDCIRCUITS Materials Chemistry Electrochemistry Field-effect transistor Hardware_LOGICDESIGN Palladium |
| Zdroj: | Journal of The Electrochemical Society. 144:L75-L78 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1837558 |
| Popis: | A method of selectively doping the polyaniline gates of chemically sensitive field-effect transistors (CHEMFETs) has been demonstrated. Activated and inactivated gates located on the same chip were exposed to a solution containing palladium. The activated gate was doped by palladium by the electroless relaxation process but the inactivated gate was not modified. High selectivity of the doping process was proved by exposing the devices to hydrogen. The method has potential applications in manufacturing single-chip heterogeneous microsensor arrays. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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