Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal–Oxide–Silicon Capacitors
| Autor: | Shu-Tong Chang, Cheng-Yi Peng, Chee-Wee Liu, Yen-Chun Fu, Ying-Jhe Yang, Ching-Fang Huang |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon business.industry Fermi level Biaxial tensile test chemistry.chemical_element Electronic Optical and Magnetic Materials law.invention Capacitor symbols.namesake Semiconductor Effective mass (solid-state physics) chemistry law Density of states Electronic engineering symbols Electrical and Electronic Engineering Composite material business Extrinsic semiconductor |
| Zdroj: | IEEE Transactions on Electron Devices. 56:1736-1745 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2009.2022693 |
| Popis: | The flatband-voltage shift of metal-oxide-silicon capacitors is investigated under the application of low-level stress (up to 220 MPa of biaxial stress and 380 MPa of uniaxial stress) to different substrate orientations. We propose that the flatband-voltage shift be modeled as the net effect of silicon-band-edge shifts and modulation of the separation between the band edge and the Fermi level under low levels of applied mechanical strain. For the (001) n-type substrate, a negative flatband-voltage shift is observed due mainly to the downward shift of the conduction-band edge, while a positive flatband-voltage shift is observed for the (001) p-type substrate due to the upward shift of the valence-band edge. For the uniaxial tensile strain on n-substrate capacitors for (110) and (111) substrates, the modulation of band-edge and Fermi-level separation by the conduction-band density of states exceeds the downward shift of the conduction band, which induces a positive flatband shift that is distinct from that observed in the (001) n-substrate. The shift of the band edges is determined by the proposed model and compared with theoretical calculations. |
| Databáze: | OpenAIRE |
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