Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil
| Autor: | Paul Heremans, Guido Groeseneken, Steve Smout, Myriam Willegems, Marc Ameys, Sarah Schols, Peter Vicca, Maarten Rockele, Ajay Bhoolokam, Jan Genoe, Jan-Laurens van der Steen, Manoj Nag, Soeren Steudel, Adrian Chasin, Tung Huei Ke, Kris Myny |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Subthreshold conduction Transistor Electrical engineering Ring oscillator Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Threshold voltage law.invention Thin-film transistor law Optoelectronics Electrical and Electronic Engineering business Polyethylene naphthalate FOIL method Diode |
| Zdroj: | Journal of the Society for Information Display. 21:369-375 |
| ISSN: | 1071-0922 |
| DOI: | 10.1002/jsid.189 |
| Popis: | In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature was limited to less than loS'C in order to ensure good overiay accuracy ( |
| Databáze: | OpenAIRE |
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