Indium tin oxide spreading layers for AlGaInP visible LEDs
| Autor: | I M Al-Ofi, D. V. Morgan, Y H Aliyu |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Fabrication
Materials science business.industry Condensed Matter Physics Electronic Optical and Magnetic Materials Indium tin oxide law.invention chemistry.chemical_compound chemistry law Gallium phosphide Materials Chemistry Indium phosphide Optoelectronics Electrical and Electronic Engineering business Layer (electronics) Visible spectrum Light-emitting diode Diode |
| Zdroj: | Semiconductor Science and Technology. 15:67-72 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/15/1/312 |
| Popis: | In this paper the effectiveness of indium tin oxide (ITO) is assessed as a current spreading layer (CSL) for AlGaInP visible light emitting diodes (LEDs). A range of device structures has been fabricated in order to test the CSL characteristics. As a basis for this comparison test devices have been fabricated both with and without any ITO spreading layers and for comparison with an alternative GaP spreading layer. These measurements confirm that ITO is an effective alternative to the GaP structure with greater potential for applications in low-cost LED arrays. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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