Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model
| Autor: | Ha-Duong Ngo, Esteban Garzon, Marco Lanuzza, Roman Golman, Adam Teman, Asaf Avnon |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences law.invention Quantum capacitance law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Materials Chemistry Electrical and Electronic Engineering High-κ dielectric 010302 applied physics Graphene business.industry Transistor 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Optoelectronics Field-effect transistor Transient (oscillation) 0210 nano-technology business Graphene nanoribbons |
| Zdroj: | Solid-State Electronics. 184:108060 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2021.108060 |
| Popis: | Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications. |
| Databáze: | OpenAIRE |
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