High Pressure as a Tool to Study Electron Localization

Autor:	P. C. Main, Mohamed Henini, A.S.G. Thornton, Richard Hill, J. C. Portal, IE Itskevich, Duncan K. Maude, H. M. Murphy, S.T. Stoddart, Laurence Eaves
Rok vydání:	2001
Předmět:	Condensed matter physics Quantum dot Chemistry High pressure Phase (waves) Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Layer (electronics) Electron localization function Quantum tunnelling Electronic Optical and Magnetic Materials Diode
Zdroj:	physica status solidi (b). 223:555-559
ISSN:	1521-3951 0370-1972
DOI:	10.1002/1521-3951(200101)223:2<555::aid-pssb555>3.0.co;2-i
Popis:	We have used high pressure to investigate resonant tunnelling in a single-barrier, n-i-n GaAs/ AlAs/GaAs diode with an embedded layer of InAs self-assembled quantum dots (SAQD). We have obtained convincing evidence for resonant tunnelling through individual r-valley-related electron states that we associate with the SAQD. The tunnel current through a SAQD was used as a local probe of a localized phase of a two-dimensional electron system in the accumulation layer of the diode. We have found evidence that at low densities, the localized electrons form relatively large, high-density clusters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f44ba542ef8e4787eba9afb133220a4f https://doi.org/10.1002/1521-3951(200101)223:2<555::aid-pssb555>3.0.co Zobrazit plný text záznamu Plný text