Direct Bonding of Silicon Wafers with Simultaneous Dopant Diffusion

Autor:	L. S. Kostina, Natalia M. Shmidt, Tatiana S. Agrunova, Konstantin B. Kostin, Helmut Föll, I. V. Grekhov
Rok vydání:	2001
Předmět:	Materials science Aqueous solution Dopant Silicon chemistry Chemical engineering Molecule chemistry.chemical_element Wafer Direct bonding Semiconductor device Contact area
Zdroj:	MRS Proceedings. 681
ISSN:	1946-4274 0272-9172
Popis:	Bonding of silicon surfaces in aqueous solution of compounds containing III and IV impurities was performed for the first time. It was observed that the presence of aluminum at the bonding interface improved structural quality of the interface. This phenomenon is explained by the increase of the contact area due to Al-OH group sandwiched between the water molecules adsorbed at hydrophilic wafer surfaces at the first bonding stage. The incorporation of Al produces a p-type layer and the I/V characteristics of the resultant np+n diodes is shown not to be influenced by the presence of the bonding interface. The technique developed could be advantageous for the design of multi-layer large area semiconductor devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f446738239d499db075a32298393d2ce https://doi.org/10.1557/proc-681-i5.7 Zobrazit plný text záznamu Full text from SpringerLink