Preliminary results of storage accelerated aging test on InP/InGaAs DHBT
| Autor: | C. Hainaut, François Marc, Jean Godin, G. A. Koné, Cristell Maneux, Virginie Nodjiadjim, Brice Grandchamp, Nathalie Labat, Thomas Zimmer |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Doping Test method Condensed Matter Physics Accelerated aging Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Stress (mechanics) chemistry.chemical_compound Reliability (semiconductor) chemistry Chemical-mechanical planarization Indium phosphide Electronic engineering Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 50:1548-1553 |
| ISSN: | 0026-2714 |
| Popis: | We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests results performed on InP/InGaAs HBT at stress temperatures of 180, 210 and 240 °C up to 3000 h. We have performed aging tests for two generations of InP HBT which differ from the collector doping level and from material used for planarization. From the Gummel plots, we note that the major degradation mechanism is located at the base–emitter junction periphery. Investigations on the physical origin of the observed failure mechanism has been performed using TCAD simulations. |
| Databáze: | OpenAIRE |
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