Highly sensitive porous silicon based photodiode structures

Autor:	G. A. Petrovicheva, D. G. Yarkin, E. A. Petrova, S. Ya. Andryushin, L. A. Balagurov, A. F. Orlov
Rok vydání:	1997
Předmět:	Materials science Silicon business.industry Annealing (metallurgy) Electron beam-induced current General Physics and Astronomy chemistry.chemical_element Schottky diode Porous silicon Photodiode law.invention Band bending chemistry Photosensitivity law Optoelectronics business
Zdroj:	Journal of Applied Physics. 82:4647-4650
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.366203
Popis:	Al/PS/c-Si photodiode structures were fabricated with a porous silicon (PS) layer of high porosity. Photosensitivity spectra, current–voltage (I–V) dependences at different temperatures, and electron beam induced current profiles were analyzed. Effects of annealing on the device characteristics were studied. The photosensitivity spectrum of the Al/PS/c-Si structures was found to be analogous to that of Al/c-Si structures. The photosensitivity value of as-prepared Al/PS/c-Si structures is 1.3 times that of an Al/c-Si Schottky diode in the wavelength range of 0.5–1.0 μm. The photosensitivity of the annealed structure strongly depends on the reverse bias; it increases by more than two orders of magnitude (up to 10 A/W) when the reverse bias increases from 0 to 5 V. The I–V dependences indicate that band bending on the sides of the PS/c-Si heterointerface are in opposite directions.
Databáze:	OpenAIRE
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