Photoluminescence Spectra of thin Zno films grown by ALD technology
| Autor: | A. A. Lisachenko, I. Kh. Akopyan, V. Yu. Davydov, Ya. A. Mogunov, A. I. Romanychev, Boris Novikov, D. V. Nazarov, A. Yu. Serov, M. E. Labzovskaya, V. V. Titov, Alexander N. Smirnov, N. G. Filosofov |
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| Rok vydání: | 2015 |
| Předmět: |
Photoluminescence
Materials science Solid-state physics Silicon Condensed Matter::Other business.industry Exciton chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Atomic layer deposition chemistry Optoelectronics business Excitation |
| Zdroj: | Physics of the Solid State. 57:1865-1869 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/s1063783415090036 |
| Popis: | The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed. |
| Databáze: | OpenAIRE |
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