Peculiarities of Minority Carrier Lifetime Variations in p-n-p-n Structures Fabricated upon Neutron-Transmutation Doped Silicon and Irradiated by Fast Electrons

Autor:	I. G. Marchenko, V. T. Troshchinskii, F. P. Korshunov
Rok vydání:	1986
Předmět:	Materials science Silicon Nuclear transmutation business.industry Doping chemistry.chemical_element Carrier lifetime Electron Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Optoelectronics Neutron Irradiation business
Zdroj:	physica status solidi (a). 98:K39-K42
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.2210980146
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f426a050d1ff8caccd140ee475790b80 https://doi.org/10.1002/pssa.2210980146 Zobrazit plný text záznamu Plný text