First 15V complementary LDMOS transistors in thin SOI 65nm low power technology

Autor:	C. Raynaud, O. Gonnard, Frederic Gianesello, O. Bon, Frédéric Morancho
Rok vydání:	2007
Předmět:	LDMOS Materials science business.industry Transistor Silicon on insulator law.invention Electrical resistance and conductance law Low-power electronics MOSFET Optoelectronics Radio frequency business Voltage
Zdroj:	Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
DOI:	10.1109/ispsd.2007.4294969
Popis:	The first complementary LDMOS transistors in thin SOI 65 nm low power technology is presented. The full functionality and integration are demonstrated. Complementary devices are achieved with great electrical parameters. Then a positive breakdown voltage-specific on resistance compromise has been characterized.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f425faee3beda37585b3ceb01e4f3883 https://doi.org/10.1109/ispsd.2007.4294969 Zobrazit plný text záznamu