Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO2 Sensors
| Autor: | Miaomiao Wei, Min Li, Xin Wang, Wenjing Xu, Yunfei Ren, Jianwen Zhao, Shuangshuang Shao, Xuying Liu, Wentao Liu, Xiaoqian Li |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Fabrication Subthreshold conduction business.industry Transistor 02 engineering and technology Carbon nanotube Dielectric 021001 nanoscience & nanotechnology 01 natural sciences law.invention law Thin-film transistor 0103 physical sciences Electrode Optoelectronics General Materials Science Thin film 0210 nano-technology business |
| Zdroj: | ACS Applied Materials & Interfaces. 12:51797-51807 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | Development of large-area, low-cost, low-voltage, low-power consumption, flexible high-performance printed carbon nanotube thin-film transistors (TFTs) is helpful to promote their future applications in sensors and biosensors, wearable electronics, and the Internet of things. In this work, low-voltage, flexible printed carbon nanotube TFTs with a large-area and low-cost fabrication process were successfully constructed using ultrathin (∼3.6 nm) AlOx thin films formed by plasma oxidation of aluminum as dielectrics and screen-printed silver electrodes as contact electrodes. The as-prepared bottom-gate/bottom-contact carbon nanotube TFTs exhibit a low leakage current (∼10-10 A), a high charge carrier mobility (up to 9.9 cm2 V-1 s-1), high on/off ratios (higher than 105), and small subthreshold swings (80-120 mV/dec) at low operation voltages (from -1.5 to 1 V). At the same time, printed carbon nanotube TFTs showed a high response (ΔR/R = 99.6%) to NO2 gas even at 16 ppm with a faster response and recovery speed (∼8 s, exposure to 0.5 ppm NO2), a lower detection limit (0.069 ppm NO2), and a low power consumption (0.86 μW, exposure to 16 ppm NO2) at a gate voltage of 0.2 V at room temperature. Moreover, the printed carbon nanotube devices exhibited excellent mechanical flexibility and bias stress stability after 12,000 bending cycles at a radius of 5 mm and a bias stress test for 7200 s at a gate voltage of ±1 V, which originated from the ultrathin and compact AlOx dielectric and the super adhesion force between screen-printed silver electrodes and polyethylene terephthalate substrates. |
| Databáze: | OpenAIRE |
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