Wide-bandgap epitaxial heterojunction windows for silicon solar cells
| Autor: | M.B. Spitzer, P.A. Sekula-Moise, R. Beaulieu, C.J. Keavney, J.J. Loferski, Geoffrey A. Landis, S. M. Vernon |
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| Rok vydání: | 1990 |
| Předmět: |
Materials science
Silicon business.industry Band gap chemistry.chemical_element Heterojunction Epitaxy Electronic Optical and Magnetic Materials law.invention Vacuum deposition chemistry law Solar cell Electronic engineering Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Homojunction business |
| Zdroj: | IEEE Transactions on Electron Devices. 37:372-381 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.46369 |
| Popis: | It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a=5.43 AA), nearly lattice-matched wide-bandgap materials are ZnS (a=5.41 AA) and GaP (a=5.45 AA). Isotype n-n heterojunctions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar |
| Databáze: | OpenAIRE |
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