Measurement of GaAs surface oxide desorption temperatures

Autor:	A. J. SpringThorpe, P. Mandeville, B. Emmerstorfer, S. J. Ingrey, W. T. Moore
Rok vydání:	1987
Předmět:	Reflection high-energy electron diffraction Ozone Physics and Astronomy (miscellaneous) Inorganic chemistry Oxide Analytical chemistry chemistry.chemical_element Epitaxy Oxygen chemistry.chemical_compound chemistry Electron diffraction Desorption Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 50:77-79
ISSN:	1077-3118 0003-6951
Popis:	Auger analysis of oxidized GaAs surfaces, heat treated in vacuo, has been used to establish an accurate value for the oxide desorption temperature Tox. Major differences are found in the value of Tox for the surface oxides produced by thermal and ozone oxidation: 582±1 °C and 638±1°C, respectively. These temperature differences are also confirmed by reflection high‐energy electron diffraction observations of the thermal cleaning of GaAs substrates prior to epitaxial growth in a molecular beam epitaxy system. It is suggested that the measured temperatures can be used in establishing appropriate growth conditions for ‘‘indium‐free’’ GaAs substrates during molecular beam epitaxial growth.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f41d13a39d17c1f274f248e74f4d7ed0 https://doi.org/10.1063/1.97824 Zobrazit plný text záznamu