Fabrication of ZnO-based metal–insulator–semiconductor diodes by ion implantation
| Autor: | V. V. Mamedov, David C. Look, M. V. Chukichev, Ya. I. Alivov, A.N. Pustovit, V. I. Zinenko, Yu.A. Agafonov, B. M. Ataev |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials Threshold voltage Full width at half maximum Ion implantation Semiconductor Materials Chemistry Ultraviolet light Optoelectronics Light emission Electrical and Electronic Engineering business Diode |
| Zdroj: | Solid-State Electronics. 48:2343-2346 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2004.05.063 |
| Popis: | A ZnO-based metal–insulator–semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I–V dependences show a good rectifying diode-like behavior with a low leakage current of 10−6 A and a threshold voltage of about 3 V. Ultraviolet light emission under forward bias exhibits a wavelength maximum of 388 nm and a full width at half maximum of 128 meV at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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