Anodisation Time Dependence of Photoluminescence Properties of Porous Silicon

Autor:	M. Premila, B. S. Panigrahi, Padma Gopalan, R. Rajaraman
Rok vydání:	1998
Předmět:	Photoluminescence Materials science Silicon business.industry Physics::Optics chemistry.chemical_element Porous silicon Crystal chemistry Quantum dot Optoelectronics Photoluminescence excitation Direct and indirect band gaps business Absorption (electromagnetic radiation)
Zdroj:	Frontiers in Materials Modelling and Design ISBN: 9783642804809
Popis:	The photoluminescence excitation and emission techniques are used to monitor the absorption and emission characteristics of silicon nanocrystals. Contribution from various critical points are identified and their shift as a function of reduction in particle size is deduced. A red shift in direct band gap energy of silicon with decreasing crystal size is experimentally observed for the first time. The results are explained on the basis of quantum confinement in silicon nanocrystals.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f4135bee913802c3009e4fc37a3bc28c https://doi.org/10.1007/978-3-642-80478-6_27 Zobrazit plný text záznamu