Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

Autor:	Fu-Tsai Hwang, Ching-Ting Lee, Qing-Xuan Yu, Hsin Ying Lee, Bang-Tai Tang
Rok vydání:	2001
Předmět:	Materials science Physics and Astronomy (miscellaneous) Hydrogen business.industry Annealing (metallurgy) Superlattice Contact resistance Wide-bandgap semiconductor chemistry.chemical_element Indium tin oxide chemistry Quantum dot Optoelectronics business Ohmic contact
Zdroj:	Applied Physics Letters. 78:3412-3414
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1376430
Popis:	The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500 °C, in hydrogen ambient. The measured specific contact resistance was 3×10−4 Ω cm2. Ohmic formation mechanisms would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the reduction conduction band offset due to the quantum confinement effects in the thin ZnO layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f40d920d2e677ec00bf3f6c291886551 https://doi.org/10.1063/1.1376430 Zobrazit plný text záznamu