Dependency of MESFET pinch-off voltage on temperature

Autor:	J. Rodriguez Tellez, B.P. Stothard
Rok vydání:	1993
Předmět:	Materials science Dependency (UML) Wafer bonding business.industry Electrical engineering Temperature measurement body regions Pinch Optoelectronics MESFET Point (geometry) Drain current business Voltage
Zdroj:	23rd European Microwave Conference, 1993.
DOI:	10.1109/euma.1993.336714
Popis:	DC measurements at different temperatures on MESFET devices indicate that, as the drain current is reduced, the behaviour of the device becomes more susceptible to temperature effects. The data shows that the dependency of the pinch-off point on temperature does not follow a straight line law. Results show that as the temperature is reduced, the dependency of the pinch-off point on the drain-source voltage increases.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f40b8a19adaec50ca106674c52d2a605 https://doi.org/10.1109/euma.1993.336714 Zobrazit plný text záznamu