Edge photoluminescence spectra and the intensity of the intracenter f-f transitions in Er-and Sm-doped GaN crystals

Autor:	M. M. Mezdrogina, A. V. Nasonov, V. V. Krivolapchuk, V. V. Lundin, N. M. Shmidt, S. V. Rodin
Rok vydání:	2004
Předmět:	Materials science Photoluminescence Solid-state physics business.industry Doping Analytical chemistry Condensed Matter Physics Epitaxy Spectral line Electronic Optical and Magnetic Materials Ion Getter Optoelectronics Metalorganic vapour phase epitaxy business
Zdroj:	Physics of the Solid State. 46:836-841
ISSN:	1090-6460 1063-7834
Popis:	Doping of GaN crystals prepared by various methods (HVPE and MOCVD) with various degrees of perfection of the mosaic structure, using rare-earth (RE) ions has been studied. An analysis of the shape of the photoluminescence spectra obtained before and after the doping showed that, as the defect concentration decreases, the intracenter f-f transitions characteristic of RE ions, at 1.54 and 0.54 µm in Er3+ and 0.72 µm in Sm2+, become observable. The intracenter f-f transitions of RE ions are seen, as a rule, in epitaxial layers with well-aggregated and relaxed domains and are absent in the case of a mosaic structure containing domains in the near-surface part of the epitaxial layer that are not fully coalesced. RE doping of the crystals under study was observed to initiate defect gettering.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f3f4baed94958df313a4c2b770f670d8 https://doi.org/10.1134/1.1744957 Zobrazit plný text záznamu Full text from SpringerLink