60Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors
| Autor: | Takeshi Ohshima, Toshio Hirao, Li Cai, Hideharu Takayanagi, Zong Fan Duan, Hideharu Ueki, Hiroaki Yano, Yasushiro Nishioka |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Transistor Oxide Condensed Matter Physics law.invention Threshold voltage Pentacene chemistry.chemical_compound chemistry Mechanics of Materials Thin-film transistor law Radiation damage Optoelectronics General Materials Science Irradiation business Polyimide |
| Zdroj: | Materials Science Forum. 687:576-579 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.687.576 |
| Popis: | Electrical characterization of 60Co γ-ray radiation effects on pentacene-based organic thin-film-transistors having two kinds of gate insulator have been carried out. For transistors with SiO2 gate insulator, the threshold voltage shifts are consistent with positive charge trapping in the oxide and a “rebound” effect is observed. This “rebound” effect is attributed to the negatively charged interface traps generated during irradiation. For polyimide gate insulator, the threshold voltage continually decreases with an increasing total-dose. At total-dose of 1200 Gy (Si), for the SiO2 gate insulator, the field-effect mobility decreased by almost 80%, and for polyimide gate insulator, it decreased by 40%. |
| Databáze: | OpenAIRE |
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