Comparative analysis of accelerated ageing effects on power RF LDMOS reliability
| Autor: | Mohamed Masmoudi, J. Marcon, Karine Mourgues, Hichame Maanane, Mohamed Ali Belaïd, K. Ketata |
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| Rok vydání: | 2005 |
| Předmět: |
LDMOS
Thermal shock Materials science business.industry Transconductance Nuclear engineering Electrical engineering Temperature cycling Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage Power (physics) Stress (mechanics) Reliability (semiconductor) Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 45:1732-1737 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2005.07.099 |
| Popis: | We present in this paper results of comparative reliability study of three accelerated ageing tests applied on power RF LDMOS: Thermal Shock Tests (TST, air-air test), Thermal Cycling Tests (TCT, air-air test) and High Temperature Storage Life (HTSL). The two first tests are carried out with a drain current flowing through the device during stress. The results obtained show the variation and the Device's performance quantitative shifts for some macroscopic electric parameters such as threshold voltage (V th ), transconductance (G m ), drain-source current (I ds ), on-state resistance (R ds on) and feedback capacitance (C rs ) tinder various ageing tests. To understand the degradation phenomena that appear after ageing, we used a new electro-thermal model implemented in Agilent's ADS as a reliability tool. |
| Databáze: | OpenAIRE |
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