| Autor: |
Elias de Los Reyes Davo, Robert Soares, Michel Goudelis |
| Rok vydání: |
1980 |
| Předmět: |
|
| Zdroj: |
10th European Microwave Conference, 1980. |
| DOI: |
10.1109/euma.1980.332773 |
| Popis: |
An original measurement technique has been developed which permits full two-port characterisation of GaAs power MESFETs under non-linear signal drive conditions. Measurement results are presented showing the variation across C-band of each of the device two-port parameters with signal drive level, and their dependance on the transistor terminal loads. Results derived by this technique correlate well with those measured by the load-pull method. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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