Semiconductor Thin Films of In2S3 for Solar Cells

Autor:	L. N. Maskaeva, E.V. Maraeva, S.S. Tulenin, A V Tretyakov, L V Shaidarov, V. F. Markov
Rok vydání:	2016
Předmět:	Materials science genetic structures Band gap Analytical chemistry chemistry.chemical_element eye diseases chemistry.chemical_compound Carbon film chemistry X-ray photoelectron spectroscopy Impurity Indium(III) sulfide Thin film Indium Chemical bath deposition
Zdroj:	Universal Journal of Chemistry. 4:74-77
ISSN:	2332-3027 2332-3019
Popis:	In 2 S 3 thin films were grown by means chemical bath deposition from acid solution. Calculation of ionic equilibrium with using of thermodynamic constants for systems defines boundary conditions of formation In 2 S 3 . Films were characterized by means of XRD, SEM, EDX and XPS methods. According to X-ray analysis In 2 S 3 thin films has a cubic structure. XPS method was shown that the surface of In 2 S 3 thin film includes oxygen and carbon contained impurities. SEM confirmed nanosized nature of thin films. Optical band gap of indium(III) sulfide equal to 2.3 eV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f3a4da70802331668d7f79e1b092317f https://doi.org/10.13189/ujc.2016.040205 Zobrazit plný text záznamu