Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure
| Autor: | Seong Hyun Kim, Sun Jin Yun, Chan Hoe Ku, Yong Suk Yang, Jung Hun Lee, Jung Wook Lim, Jae Bon Koo, Sang Chul Lim |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry General Chemical Engineering Transistor Drain-induced barrier lowering Overdrive voltage Threshold voltage law.invention Pentacene chemistry.chemical_compound Parylene chemistry law Thin-film transistor Electrochemistry Optoelectronics General Materials Science Field-effect transistor Electrical and Electronic Engineering Physical and Theoretical Chemistry business |
| Zdroj: | Electrochemical and Solid-State Letters. 9:G320 |
| ISSN: | 1099-0062 |
| Popis: | We report on the fabrication of dual-gate organic thin-film transistors using plasma-enhanced atomic layer deposited 150 nm thick Al 2 O 3 and 300 nm thick parylene as gate dielectrics and pentacene as a semiconductor. The threshold voltage (V th ) is changed from 14.5 to -1.5 V when the voltage bias of the top-gate electrode is changed from -10 to 20 V. The voltage transfer characteristics of an inverter with a dual-gate driver transistor and a single-gate load transistor, specifically, swing range and inversion voltage, have been artificially controlled by changing the voltage bias of the top-gate electrode. |
| Databáze: | OpenAIRE |
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