High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues
| Autor: | Jon Tao, G.A. Rezvani, Chih-Hung Chen, M.J. Deen, Y. Kiyota, S. Asgaran |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Engineering
Analytical expressions Noise measurement business.industry Electrical engineering Noise (electronics) Electronic Optical and Magnetic Materials Computer Science::Hardware Architecture CMOS MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Technology scaling Electrical and Electronic Engineering business Frequency noise Communication channel |
| Zdroj: | IEEE Transactions on Electron Devices. 53:2062-2081 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2006.880370 |
| Popis: | Compact modeling of the most important high-frequency (HF) noise sources of the MOSFET is presented in this paper, along with challenges in noise measurement and deembedding of future CMOS technologies. Several channel thermal noise models are reviewed and their ability to predict the channel noise of extremely small devices is discussed. The impact of technology scaling on noise performance of MOSFETs is also investigated by means of analytical expressions. It is shown that the gate tunneling current has a significant impact on MOSFETs noise parameters, especially at lower frequencies. Limitations of some commonly used noise models in predicting the HF noise parameters of modern MOSFETs are addressed and methods to alleviate some of the limitations are discussed |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|