Effect of gadolinium impurity on transmittance and reflectance of Hg3In2Te6 crystals
| Autor: | O. G. Grushka, P. M. Gorlei, Z. M. Grushka |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Condensed matter physics business.industry Band gap Doping Physics::Optics Condensed Matter Physics Polarization (waves) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Optics Impurity Electric field Transmittance business Absorption (electromagnetic radiation) Refractive index |
| Zdroj: | Semiconductors. 37:256-258 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1561513 |
| Popis: | The results of measuring the optical transmission and reflection spectra in the transparency region of Hg3In2Te6:Gd semiconducting crystals are reported. It is shown that, in the entire wavelength range under investigation (2–25 µm), doping with Gd results in an increase in the continuous structureless absorption by impurities and defects, which introduce a quasi-continuous spectrum of localized states within the band gap. A decrease in transmittivity is accompanied by a decrease in the wavelength-independent reflectivity. Variation in the refractive index is attributed to changes in the bonding and electronic polarization of Hg3In2Te6:Gd crystals. It is ascertained that polarization constants depend linearly on the strength of internal electric fields which exist in the vicinity of impurity defects. |
| Databáze: | OpenAIRE |
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