XPS investigation of aluminum and silicon surfaces nitrided by a distributed electron cyclotron resonance nitrogen plasma

Autor:	B. Mutel, N Duez, C. Vivien, P. Goudmand, Léon Gengembre, Jean Grimblot, O. Dessaux
Rok vydání:	2001
Předmět:	Silicon Chemistry Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Plasma Nitride Condensed Matter Physics Electron cyclotron resonance Surfaces Coatings and Films X-ray photoelectron spectroscopy Etching (microfabrication) Materials Chemistry Plasma processing Nitriding
Zdroj:	Surface Science. :220-226
ISSN:	0039-6028
DOI:	10.1016/s0039-6028(01)00795-6
Popis:	Aluminum and silicon samples were nitrided by a distributed electron cyclotron resonance nitrogen plasma. The plasma conditions used for the treatment correspond to a maximum N2+ concentration in the sample position, determined by optical emission spectroscopy. The substrates were always polarized by a DC bias voltage at −120 V and were externally heated or not. Nitrided samples were characterized by X-ray photoelectron spectroscopy (XPS) after an exposure to ambient air. A depth profile of the treated substrates was achieved by Ar+ etching sequences in the XPS spectrometer. When the samples are polarized and heated at 500°C during the plasma treatment, the nitride layer (dense AlN or Si3N4 and diffusion layers) obtained on aluminum (∼0.3 μm) is much thicker than on silicon (∼30 A).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f32cbdd8d8f0c0e7c1eee8f4cf8ec4af https://doi.org/10.1016/s0039-6028(01)00795-6 Zobrazit plný text záznamu Full Text from ScienceDirect