Photoreflectance study of the electronic structure of Si‐doped In y Ga 1− y As 1− x N x films with x < 0.012

Autor:	S. N. Mohammad, Damian Bryson, Youn-Seon Kang, A. G. Birdwell, M. M. E. Fahmi, W. R. Thurber, Mark D. Vaudin, Alexander J. Shapiro, Lawrence H. Robins
Rok vydání:	2005
Předmět:	Condensed matter physics Impurity Hall effect Chemistry Analytical chemistry Si doped chemistry.chemical_element Electronic structure Flory–Huggins solution theory Spectroscopy Conduction band Nitrogen
Zdroj:	physica status solidi (c). 2:2800-2804
ISSN:	1610-1634
Popis:	The electronic structure of Si-doped InyGa1−yAs1−xNx films on GaAs substrates, grown by nitrogen-plasma-assisted MBE, was examined by photoreflectance (PR) spectroscopy at temperatures between 20 K and 300 K. The measured critical-point energies were described by a band anti-crossing (BAC) model with the addition of a Burstein-Moss band-filling term. The energy difference between the nitrogen impurity level and conduction band edge was (0.3004 ± 0.0101) eV at 20 K, and (0.3286 ± 0.0089) eV at 295 K; the BAC interaction parameter was (2.588 ± 0.071) eV. It was inferred from the magnitude of the Burstein-Moss shift that the near-surface carrier concentration, probed by PR, is reduced from the bulk (Hall effect) carrier concentration by a reduction factor of 0.266 ± 0.145. The effect of strain on the PR energies was too small to observe. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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