Fundamental limits to detection of low-energy ions using silicon solid-state detectors

Autor:	R. W. Harper, R. Korde, S. M. Ritzau, Herbert O. Funsten
Rok vydání:	2004
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Passivation Physics::Instrumentation and Detectors Detector chemistry.chemical_element Electron Particle detector Ion Pulse (physics) Photodiode law.invention chemistry law Atomic physics
Zdroj:	Applied Physics Letters. 84:3552-3554
ISSN:	1077-3118 0003-6951
Popis:	Recent advances in solid-state detector (SSD) technology have demonstrated the detection of ions and electrons down to 1 keV. However, ions at keV energies lose a substantial amount of energy ΔN in a SSD through Coulombic interactions with target nuclei rather than through interactions that contribute to the SSD output pulse, whose magnitude is a measure of the ion’s incident energy. Because ΔN depends on the ion species, detector material, and interaction physics, it represents a fundamental limitation of the output pulse magnitude of the detector. Using 100% quantum collection efficiency silicon photodiodes with a thin (40–60 A) SiO2 passivation layer, we accurately quantify ΔN for incident 1–120 keV ions and, therefore, evaluate the detection limits of keV ions using silicon detectors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f317971be3447f29fd2521fb0307a32e https://doi.org/10.1063/1.1719272 Zobrazit plný text záznamu