Nitride gallium high power integrated heterostructure FETs

Autor:	N. V. Monchares, Yu. N. Sveshnikov, Yu.N. Rakov, A. F. Zazulnikov, T. K. Bondareva, L. V. Schepina, G. F. Uzelmann, T. P. Bobrova, Yu. B. Mjakishev
Rok vydání:	2010
Předmět:	Power gain Materials science business.industry Wide-bandgap semiconductor chemistry.chemical_element Heterojunction Nitride Power (physics) chemistry Microwave field effect transistors Sapphire Optoelectronics Gallium business
Zdroj:	2010 20th International Crimean Conference "Microwave & Telecommunication Technology".
DOI:	10.1109/crmico.2010.5632774
Popis:	The heterostructures AlGaN/AlN/GaN, grown on sapphire substrates, the standard design of the integrated power HFET and the design with the additional field-plate, and its technology have been developed. The HFETs have given output power 4,5–5,5 and 3–4 W/mm, and power gain 4,5–7,5 и 3,8–6,0 dB at frequencies 12 and 17,5 GHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f315abc68178553a19d7916b75e5cb14 https://doi.org/10.1109/crmico.2010.5632774 Zobrazit plný text záznamu