Dry Etching of BaSrTiO3 and LaNiO3 Thin Films in Inductively Coupled Plasmas
| Autor: | K. P. Lee, R. K. Singh, Avanish Kumar Srivastava, Stephen J. Pearton, D. Kumar, K. B. Jung |
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| Rok vydání: | 1999 |
| Předmět: |
Plasma etching
biology Renewable Energy Sustainability and the Environment Chemistry Analytical chemistry Plasma Photoresist Condensed Matter Physics biology.organism_classification Surfaces Coatings and Films Electronic Optical and Magnetic Materials Etching (microfabrication) Materials Chemistry Electrochemistry Lanio Dry etching Thin film Reactive-ion etching |
| Zdroj: | Journal of The Electrochemical Society. 146:3778-3782 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1392549 |
| Popis: | High density plasma etching of (Ba, Sr)TiO 3 (BST) and LaNiO 3 (LNO) thin films was performed in two different plasma chemistries, Cl 2 /Ar and CH 4 /H 2 /Ar. While the latter chemistry produced extremely low etch rates (≤100 A min -1 ) under all conditions, the Cl 2 /Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 A min -1 for both materials were achieved with selectivities of ∼1 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions. |
| Databáze: | OpenAIRE |
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