A Source-Side Injection Lucky Electron Model for Schottky Barrier Metal–Oxide–Semiconductor Devices
| Autor: | Chun-Hsing Shih, Jhong-Sheng Wang, Ji-Ting Liang, Nguyen Dang Chien |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Free electron model
Materials science business.industry Schottky barrier Metal–semiconductor junction Electronic Optical and Magnetic Materials Non-volatile memory Electrode Optoelectronics Field-effect transistor Electric potential Electrical and Electronic Engineering business Hot-carrier injection |
| Zdroj: | IEEE Electron Device Letters. 32:1331-1333 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2011.2162577 |
| Popis: | This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric field is derived from the solutions of 2-D Poisson's equations. The conformal-mapping method is used to estimate the gate electrode contribution to determine the source-side injected probability. 2-D device simulations confirm the agreements between the analytical models and the numerical results. This study provides a physical understanding of enhanced source-side injection in new Schottky barrier nonvolatile memory. |
| Databáze: | OpenAIRE |
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