Bias-enhanced nucleation and growth processes for improving the electron field emission properties of diamond films
| Autor: | Chen-Yau Tang, I-Nan Lin, Huang-Chin Chen, Gaung-Chin Tzeng, Hsiu-Fung Cheng, Kuang-Yau Teng |
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| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 111:053701 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.3687918 |
| Popis: | The evolution of diamond films in bias-enhanced-nucleation (BEN) and bias-enhanced-growth (BEG) processes was systematically investigated. While the BEN process can efficiently form diamond nuclei on the Si substrates, BEG with large enough applied field (> –400 V) and for sufficiently long periods (>60 min) was needed to develop proper granular structure for the diamond films so as to enhance the electron field emission (EFE) properties of the films. For the films BEG under −400 V for 60 min (after BEN for 10 min), the EFE process can be turned on at a field as small as 3.6 V/μm, attaining a EFE current density as large as 325 μA/cm2 at an applied field of 15 V/μm. Such an EFE behavior is even better than that of the ultrananocrystalline diamond films grown in CH4/Ar plasma. Transmission electron microscopic examination reveals that the prime factor enhancing the EFE properties of these films is the induction of the nano-graphite filaments along the thickness of the films that facilitates the transport o... |
| Databáze: | OpenAIRE |
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