Peculiarities of the silica surface center structure in rigid dehydroxidation conditions
Autor: | A. O. Litinsky, G. Y. Vasiljeva, V. N. Perminov |
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Rok vydání: | 2006 |
Předmět: | |
Zdroj: | International Journal of Quantum Chemistry. 107:326-329 |
ISSN: | 1097-461X 0020-7608 |
DOI: | 10.1002/qua.21196 |
Popis: | A model of molecular claster and nonempirical calculation schemes MP2/6-31G*, MP4/6-31G*, and MP2/DZVP2 were applied to study electronic and energy characteristics of the surface centers of different SiO2 modifications in rigid dehydroxidation conditions. It was established that depending on an angle α = Si′O′Si″ (where O′ is an oxygen atom of the nearest to the surface layer), O* atom corresponding with two surface Si atoms, could (i) form a chemical bond with one of the Si′ or Si″-centers (an asymmetric configuration, α > 118° ÷ 120°); or (ii) be common for these centers (a symmetric configuration, α 132° ÷ 133°, the basic state was triple and at α < 132° ÷ 133°, it was single. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007 |
Databáze: | OpenAIRE |
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