The ohmic contact between zinc oxide and highly oriented pyrolytic graphite
| Autor: | Navid Alaei-Sheini, Faramarz Hossein-Babaei, Mojtaba Jahangiri |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Nanotechnology 02 engineering and technology 010402 general chemistry 01 natural sciences law.invention Highly oriented pyrolytic graphite law General Materials Science Ohmic contact Graphene oxide paper Graphene business.industry Mechanical Engineering Schottky diode 021001 nanoscience & nanotechnology Condensed Matter Physics Electrical contacts 0104 chemical sciences Semiconductor chemistry Mechanics of Materials Optoelectronics 0210 nano-technology business |
| Zdroj: | Materials Letters. 192:52-55 |
| ISSN: | 0167-577X |
| Popis: | Contacts between highly oriented pyrolytic graphite (HOPG) and graphene with many important semiconductors, including silicon, are of Schottky type with significant junction energy barrier heights. Here, we show that the junction between the transparent oxide semiconductor ZnO and HOPG is ohmic in nature, but the oxygen species adsorbed to the HOPG surface at the junction cause an electron energy barrier buildup and render the device current vs. voltage characteristics rectifying. Upon a brief heat treatment in vacuum, these devices demonstrate their intrinsic ohmicity. The presented model describes the obtained experimental data and clarifies the important role of the oxygen adsorption in determining the quality of the graphene/semiconductor electrical contacts. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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