Enhanced Growth of High Sn Concentration (Sn>=10%) GeSn on Insulator by Low Temperature (~170°C) Solid-Phase Crystallization Combined with Weak Laser Irradiation
Autor: | T. Sadoh, T. Sugino, K. Moto, R. Matsumura, H. Ikenoue, M. Miyao |
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Rok vydání: | 2018 |
Předmět: | |
Zdroj: | Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials. |
DOI: | 10.7567/ssdm.2018.e-6-03 |
Databáze: | OpenAIRE |
Externí odkaz: |