Enhanced Growth of High Sn Concentration (Sn>=10%) GeSn on Insulator by Low Temperature (~170°C) Solid-Phase Crystallization Combined with Weak Laser Irradiation

Autor: T. Sadoh, T. Sugino, K. Moto, R. Matsumura, H. Ikenoue, M. Miyao
Rok vydání: 2018
Předmět:
Zdroj: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2018.e-6-03
Databáze: OpenAIRE