Electric-field-controlled memory effect in heterostructures for gas sensors
| Autor: | B. A. Akimov, Marina Rumyantseva, Alexander Gaskov, Ludmila I. Ryabova, R. B. Vasil’ev, M. Labeau, Michel Langlet |
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| Rok vydání: | 1999 |
| Předmět: |
Quenching
Materials science Physics and Astronomy (miscellaneous) business.industry Capacitive sensing Oxide Heterojunction Capacitance Signal Condensed Matter::Materials Science chemistry.chemical_compound Adsorption chemistry Electric field Optoelectronics business Astrophysics::Galaxy Astrophysics |
| Zdroj: | Technical Physics Letters. 25:471-474 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/1.1262531 |
| Popis: | A capacitive gas sensor has been created on the basis of an n-SnO2/SiO2/p-Si heterostructure with two successive oxide layers. The presence of polar C2H5OH, NH3, and H2O gas molecules in air leads to a significant increase in the capacitance of the structure at room temperature. An important feature of the adsorption process is a memory effect, which is confined to the possibility of maintaining the capacitance value after removal of the active component from the gas mixture. The possibility of quenching the accumulated useful signal by electric-field pulses has been realized for the first time as applied to gas sensors. |
| Databáze: | OpenAIRE |
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