In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms

Autor:	D. V. Sheglov, L. I. Fedina, Anton Latyshev, S. A. Ponomarev, S. V. Sitnikov, E. E. Rodyakina, A. S. Petrov, D. I. Rogilo
Rok vydání:	2021
Předmět:	Materials science Silicon chemistry.chemical_element General Chemistry Activation energy Condensed Matter Physics Molecular physics Electromigration Adsorption chemistry Desorption General Materials Science Sublimation (phase transition) Molecular beam Vicinal
Zdroj:	Crystallography Reports. 66:570-580
ISSN:	1562-689X 1063-7745
DOI:	10.1134/s1063774521040192
Popis:	The results of recent studies of the structural morphological transformations of Si(111) and Si(100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) are presented. It is established that high-temperature sublimation from extremely wide Si(111) terraces occurs at a smaller activation energy (3.77 eV) than from the vicinal surface (4.04 eV). A nonmonotonic change in the kinetics of step bunching during a smooth transition from sublimation to growth on the Si(100) surface is recorded. The structural transformations caused by electromigration of positively charged Sn adatoms on the reconstructed Si(111) surface are demonstrated. It is shown that Si(111) surface etching under exposure to a Se molecular beam occurs in a layer-by-layer mode due to the desorption of SiSe2 molecules with activation energy of 2.65 eV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f2e3479e76aa74684f88481d98cd80c2 https://doi.org/10.1134/s1063774521040192 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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