Deep UV ${\rm Ta}_{2}{\rm O}_{5}$/Zinc-Indium-Tin-Oxide Thin Film Photo-Transistor
| Autor: | Z. D. Hung, W. Y. Weng, Shoou-Jinn Chang, C. J. Chiu, Tsung-Ying Tsai, S. S. Shih |
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| Rok vydání: | 2012 |
| Předmět: |
Electron mobility
Materials science business.industry Gate dielectric Photodetector Dielectric Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Threshold voltage Indium tin oxide Thin-film transistor Optoelectronics Electrical and Electronic Engineering Thin film business |
| Zdroj: | IEEE Photonics Technology Letters. 24:1018-1020 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2012.2193564 |
| Popis: | The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3 × 10-9 A to 7.97 × 10-5 A, as we illuminated the sample with λ = 250-nm UV light when VG is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3 × 105 for the fabricated Ta2O5/a-ZITO TFT. |
| Databáze: | OpenAIRE |
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