Relaxed Si1−xGex films with reduced dislocation densities grown by molecular beam epitaxy

Autor:	Martin O. Tanner, Kang L. Wang, M. Meshkinpour, Michael A. Chu, Mark S. Goorsky
Rok vydání:	1995
Předmět:	Diffraction Photoluminescence Materials science business.industry Relaxation (NMR) Silicon on insulator Condensed Matter Physics Inorganic Chemistry Crystallography Materials Chemistry Optoelectronics Wafer Dislocation business Layer (electronics) Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 157:121-125
ISSN:	0022-0248
DOI:	10.1016/0022-0248(95)00379-7
Popis:	The quality of annealed Si 0.86 Ge 0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO 2 layer, which allows strain in the Si 0.86 Ge 0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f2c3db8a362f0785fa7d5495cc3f73f8 https://doi.org/10.1016/0022-0248(95)00379-7 Zobrazit plný text záznamu Full Text from ScienceDirect