Technology and electronic properties of PHEMT AlGaAs/In y(z)Ga1 − y(z)As/GaAs compositionally graded quantum wells

Autor:	M. M. Grekhov, V. P. Gladkov, I. S. Vasil’evskii, N. I. Kargin, A. N. Vinichenko, M.N. Strikhanov
Rok vydání:	2014
Předmět:	Crystal Electron mobility Materials science Condensed matter physics Heterojunction High-electron-mobility transistor Electron Condensed Matter Physics Epitaxy Electron scattering Atomic and Molecular Physics and Optics Quantum well Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 48:1226-1232
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782614090255
Popis:	Graded InyGa1 − yAs quantum well epitaxial technology is developed for engineering the band potential profile. The crystal structure of the samples is clarified by high-resolution X-ray diffraction. The influence of quantum-well bending on the crystal and electron transport properties is studied on one- and two-side δ-doped Al0.23Ga0.77As/InyGa1 − yAs/Al0.23Ga0.77As PHEMT heterostructures. The highest InAs content gradient reached is 1.2%/nm for the mean InAs content y = 0. 2. Optimization of the InAs content grading leads to an increase in the electron mobility and concentration. This effect is related to the straightening and deepening of the quantum-well potential profile. In addition, the electron wavefunction shifts toward the quantum-well center, thus reducing electron scattering.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f2c3573fb0786ce2121ef0883fc04dea https://doi.org/10.1134/s1063782614090255 Zobrazit plný text záznamu Plný text ve formátu PDF