High-efficient operation of large-area (100 cm2) thin film polycrystalline silicon solar cell based on SOI structure
Autor: | Yoshinori Matsuno, Hiroaki Morikawa, Hisao Kumabe, Mikio Deguchi, Y. Kawama, Takashi Ishihara, Satoshi Arimoto, Toshio Murotani |
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Rok vydání: | 1994 |
Předmět: |
Zone melting
Materials science Passivation Silicon Renewable Energy Sustainability and the Environment business.industry chemistry.chemical_element Silicon on insulator Recrystallization (metallurgy) engineering.material Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Polycrystalline silicon chemistry law Solar cell engineering Optoelectronics Thin film business |
Zdroj: | Solar Energy Materials and Solar Cells. 34:257-262 |
ISSN: | 0927-0248 |
DOI: | 10.1016/0927-0248(94)90048-5 |
Popis: | High-efficient operation of a large-area thin film polycrystalline Si solar cell with a novel structure based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. The (100) crystal orientation area over 90% has successfully been obtained by controlling the ZMR conditions, which allowed to form a uniform random pyramidal structure at the cell surface. The effect of hydrogen passivation has also been investigated for further improvement of the cell characteristics. By employing a light trapping structure (textured surface) and hydrogen passivation, an efficiency of 14.22% was obtained for a practical 100 cm 2 size. |
Databáze: | OpenAIRE |
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