| Autor: |
Pei-Lin Wu, Yu-Jie Zhou, Po-Lin Lin, Sheng-Kai Fan, Shi-Zhe Hong, Shen-Li Chen, Tien-Yu Lan |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
ICKII |
| DOI: |
10.1109/ickii50300.2020.9318840 |
| Popis: |
The RESURF-region effect formed by the DPW layer and HVNW in an ultra-high voltage (UHV) LDMOS device on the electric field distribution and its ESD capability is investigated in this paper. After testing these DPW-layer partition samples of the UHV nLDMOS by a TLP tester, it can be found that the secondary breakdown current (It2) of the DPW1/4 & DPW_24 cells were increased from 1.73A to 3.36A (increasing 94.2%) as compared with the Reference device. Therefore, the discrete DPW layer can greatly improve the ESD capability in the UHV nLDMOS components. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
